N-Channel MOSFET, 200 A, 40 V, 6 + Tab-Pin H2PAK STMicroelectronics STH410N4F7-6AG

RS Stock No.: 111-6467Brand: STMicroelectronicsManufacturers Part No.: STH410N4F7-6AG
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

40 V

Series

STripFET F7

Package Type

H2PAK

Mounting Type

Surface Mount

Pin Count

6 + Tab

Maximum Drain Source Resistance

1.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

365 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

8.9mm

Typical Gate Charge @ Vgs

141 nC @ 10 V

Width

10.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

4.8mm

Product details

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

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P.O.A.

N-Channel MOSFET, 200 A, 40 V, 6 + Tab-Pin H2PAK STMicroelectronics STH410N4F7-6AG
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Standard

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Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 1
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

N-Channel MOSFET, 200 A, 40 V, 6 + Tab-Pin H2PAK STMicroelectronics STH410N4F7-6AG
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 1
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

40 V

Series

STripFET F7

Package Type

H2PAK

Mounting Type

Surface Mount

Pin Count

6 + Tab

Maximum Drain Source Resistance

1.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

365 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

8.9mm

Typical Gate Charge @ Vgs

141 nC @ 10 V

Width

10.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

4.8mm

Product details

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics