STMicroelectronics MDmesh M5 N-Channel MOSFET, 15 A, 710 V, 8-Pin PowerFLAT 5 x 6 STL18N65M5

RS Stock No.: 792-5899PBrand: STMicroelectronicsManufacturers Part No.: STL18N65M5
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

710 V

Series

MDmesh M5

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

6.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.4mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

P.O.A.

Each (Supplied on a Reel) (ex VAT)

STMicroelectronics MDmesh M5 N-Channel MOSFET, 15 A, 710 V, 8-Pin PowerFLAT 5 x 6 STL18N65M5
Select packaging type

P.O.A.

Each (Supplied on a Reel) (ex VAT)

STMicroelectronics MDmesh M5 N-Channel MOSFET, 15 A, 710 V, 8-Pin PowerFLAT 5 x 6 STL18N65M5

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

710 V

Series

MDmesh M5

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

6.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.4mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics