Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
600V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
215mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
24nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
0.9mm
Length
8.1mm
Standards/Approvals
No
Width
8.1mm
Automotive Standard
No
Country of Origin
China
Product Details
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
600V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
215mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
24nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
0.9mm
Length
8.1mm
Standards/Approvals
No
Width
8.1mm
Automotive Standard
No
Country of Origin
China
Product Details
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
