STMicroelectronics MDmesh II Type N-Channel MOSFET, 2.2 A, 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N

RS Stock No.: 151-422Brand: STMicroelectronicsManufacturers Part No.: STL3NM60N
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerFLAT (3.3 x 3.3) HV

Series

MDmesh II

Pin Count

8

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9.5nC

Maximum Power Dissipation Pd

22W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

Country of Origin

Malaysia

Stock information temporarily unavailable.

P.O.A.

Each (On a Reel of 3000) (ex VAT)

STMicroelectronics MDmesh II Type N-Channel MOSFET, 2.2 A, 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N

P.O.A.

Each (On a Reel of 3000) (ex VAT)

STMicroelectronics MDmesh II Type N-Channel MOSFET, 2.2 A, 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerFLAT (3.3 x 3.3) HV

Series

MDmesh II

Pin Count

8

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9.5nC

Maximum Power Dissipation Pd

22W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

Country of Origin

Malaysia