STMicroelectronics STripFET Type P-Channel MOSFET, 3 A, 60 V Enhancement, 4-Pin SOT-223
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-223
Series
STripFET
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.6W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
175°C
Width
3.7 mm
Height
1.8mm
Length
6.7mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-223
Series
STripFET
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.6W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
175°C
Width
3.7 mm
Height
1.8mm
Length
6.7mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.