STMicroelectronics MDmesh M5 N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 STP18N55M5

RS Stock No.: 168-7467Brand: STMicroelectronicsManufacturers Part No.: STP18N55M5
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

550 V

Package Type

TO-220

Series

MDmesh M5

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

15.75mm

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

P.O.A.

STMicroelectronics MDmesh M5 N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 STP18N55M5

P.O.A.

STMicroelectronics MDmesh M5 N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 STP18N55M5

Stock information temporarily unavailable.

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

550 V

Package Type

TO-220

Series

MDmesh M5

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

15.75mm

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics