STMicroelectronics MDmesh M5 N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STP45N65M5

RS Stock No.: 783-3107PBrand: STMicroelectronicsManufacturers Part No.: STP45N65M5
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

710 V

Series

MDmesh M5

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

78 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

82 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.75mm

Country of Origin

China

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

P.O.A.

Each (Supplied in a Tube) (ex VAT)

STMicroelectronics MDmesh M5 N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STP45N65M5
Select packaging type

P.O.A.

Each (Supplied in a Tube) (ex VAT)

STMicroelectronics MDmesh M5 N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STP45N65M5

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

710 V

Series

MDmesh M5

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

78 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

82 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.75mm

Country of Origin

China

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics