Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Pin Count
2
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Peak Reverse Current Ir
60μA
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Width
10.58mm
Length
15.95mm
Height
4.3mm
Automotive Standard
No
Product Details
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
Stock information temporarily unavailable.
P.O.A.
Each (On a Reel of 1000) (ex VAT)
1000
P.O.A.
Each (On a Reel of 1000) (ex VAT)
Stock information temporarily unavailable.
1000
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Pin Count
2
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Peak Reverse Current Ir
60μA
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Width
10.58mm
Length
15.95mm
Height
4.3mm
Automotive Standard
No
Product Details
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
