STMicroelectronics STripFET Type P-Channel MOSFET, 2 A, 30 V Enhancement, 3-Pin SOT-23

RS Stock No.: 145-8882Brand: STMicroelectronicsManufacturers Part No.: STR2P3LLH6
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.1V

Maximum Power Dissipation Pd

350mW

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6nC

Maximum Operating Temperature

150°C

Length

3.04mm

Standards/Approvals

No

Width

1.75 mm

Height

1.3mm

Automotive Standard

No

Country of Origin

China

Product details

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics STripFET Type P-Channel MOSFET, 2 A, 30 V Enhancement, 3-Pin SOT-23

P.O.A.

STMicroelectronics STripFET Type P-Channel MOSFET, 2 A, 30 V Enhancement, 3-Pin SOT-23

Stock information temporarily unavailable.

Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.1V

Maximum Power Dissipation Pd

350mW

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6nC

Maximum Operating Temperature

150°C

Length

3.04mm

Standards/Approvals

No

Width

1.75 mm

Height

1.3mm

Automotive Standard

No

Country of Origin

China

Product details

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics