N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-247 STMicroelectronics STW10NK60Z
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.15mm
Transistor Material
Si
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Height
20.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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P.O.A.
1
P.O.A.
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 24 | P.O.A. |
| 25 - 99 | P.O.A. |
| 100 - 249 | P.O.A. |
| 250 - 499 | P.O.A. |
| 500+ | P.O.A. |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.15mm
Transistor Material
Si
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Height
20.15mm
Minimum Operating Temperature
-55 °C
Product details