STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247 STW28N60DM2

RS Stock No.: 111-6480Brand: STMicroelectronicsManufacturers Part No.: STW28N60DM2
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

MDmesh DM2

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

190W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

39nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247 STW28N60DM2
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 2
1P.O.A.
3P.O.A.
5P.O.A.
7P.O.A.
9P.O.A.
11P.O.A.
13P.O.A.
15P.O.A.
17P.O.A.
19P.O.A.
21P.O.A.
23P.O.A.
25P.O.A.
27P.O.A.
29P.O.A.

P.O.A.

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247 STW28N60DM2

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 2
1P.O.A.
3P.O.A.
5P.O.A.
7P.O.A.
9P.O.A.
11P.O.A.
13P.O.A.
15P.O.A.
17P.O.A.
19P.O.A.
21P.O.A.
23P.O.A.
25P.O.A.
27P.O.A.
29P.O.A.

Technical documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

MDmesh DM2

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

190W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

39nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics