STMicroelectronics MDmesh M5 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STW30N65M5
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
MDmesh M5
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
139 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
64 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Height
20.15mm
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
MDmesh M5
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
139 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
64 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Height
20.15mm
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.