STMicroelectronics MDmesh M5 N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5

RS Stock No.: 168-7551Brand: STMicroelectronicsManufacturers Part No.: STW77N65M5
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

MDmesh M5

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

400 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.15mm

Length

15.75mm

Typical Gate Charge @ Vgs

185 nC @ 10 V

Height

20.15mm

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

Stock information temporarily unavailable.

P.O.A.

STMicroelectronics MDmesh M5 N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5

P.O.A.

STMicroelectronics MDmesh M5 N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

MDmesh M5

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

400 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.15mm

Length

15.75mm

Typical Gate Charge @ Vgs

185 nC @ 10 V

Height

20.15mm

Product details

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics