Silicon MOSFET, 107 A, 60 V, 8-Pin PDFN56 Taiwan Semi TSM048NB06LCR

RS Stock No.: 216-9660Brand: Taiwan SemiconductorManufacturers Part No.: TSM048NB06LCR
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Technical documents

Specifications

Brand

Taiwan Semiconductor

Maximum Continuous Drain Current

107 A

Maximum Drain Source Voltage

60 V

Series

TSM025

Package Type

PDFN56

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Transistor Material

Silicon

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Stock information temporarily unavailable.

P.O.A.

Silicon MOSFET, 107 A, 60 V, 8-Pin PDFN56 Taiwan Semi TSM048NB06LCR

2500

Available in multiples of 1
2500P.O.A.
5000P.O.A.
7500P.O.A.
10000P.O.A.
12500P.O.A.
15000P.O.A.
17500P.O.A.
20000P.O.A.
22500P.O.A.
25000P.O.A.
27500P.O.A.
30000P.O.A.
32500P.O.A.
35000P.O.A.
37500P.O.A.

P.O.A.

Silicon MOSFET, 107 A, 60 V, 8-Pin PDFN56 Taiwan Semi TSM048NB06LCR
Stock information temporarily unavailable.

2500

Available in multiples of 1
2500P.O.A.
5000P.O.A.
7500P.O.A.
10000P.O.A.
12500P.O.A.
15000P.O.A.
17500P.O.A.
20000P.O.A.
22500P.O.A.
25000P.O.A.
27500P.O.A.
30000P.O.A.
32500P.O.A.
35000P.O.A.
37500P.O.A.

Technical documents

Specifications

Brand

Taiwan Semiconductor

Maximum Continuous Drain Current

107 A

Maximum Drain Source Voltage

60 V

Series

TSM025

Package Type

PDFN56

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Transistor Material

Silicon