N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Taiwan Semi TSM090N03CP ROG

RS Stock No.: 171-3608Brand: Taiwan SemiconductorManufacturers Part No.: TSM090N03CP
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

7.5 nC @ 4.5 V

Width

5.8mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Height

2.3mm

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P.O.A.

N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Taiwan Semi TSM090N03CP ROG

P.O.A.

N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Taiwan Semi TSM090N03CP ROG
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

7.5 nC @ 4.5 V

Width

5.8mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Height

2.3mm