Taiwan Semi N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 TSM2302CX RFG

RS Stock No.: 398-423PBrand: Taiwan SemiconductorManufacturers Part No.: TSM2302CX RFG
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Technical documents

Specifications

Brand

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

3.69 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Maximum Operating Temperature

+150 °C

Height

0.95mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel Power MOSFET, Taiwan Semiconductor

MOSFET Transistors, Taiwan Semiconductor

P.O.A.

Taiwan Semi N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 TSM2302CX RFG
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Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

250

Available in multiples of 50
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.
800P.O.A.
850P.O.A.
900P.O.A.
950P.O.A.

P.O.A.

Taiwan Semi N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 TSM2302CX RFG

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

250

Available in multiples of 50
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.
800P.O.A.
850P.O.A.
900P.O.A.
950P.O.A.

Stock information temporarily unavailable.

quantityUnit price
250 - 450P.O.A.
500 - 950P.O.A.
1000 - 2450P.O.A.
2500+P.O.A.

Technical documents

Specifications

Brand

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

3.69 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Maximum Operating Temperature

+150 °C

Height

0.95mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel Power MOSFET, Taiwan Semiconductor

MOSFET Transistors, Taiwan Semiconductor