Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSSOP Taiwan Semi TSM6968DCA RVG
Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
TSSOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.04 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
4.5mm
Width
3.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details
Dual N-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
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P.O.A.
50
P.O.A.
50
Buy in bulk
| quantity | Unit price |
|---|---|
| 50 - 200 | P.O.A. |
| 250 - 450 | P.O.A. |
| 500 - 2450 | P.O.A. |
| 2500 - 4950 | P.O.A. |
| 5000+ | P.O.A. |
Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
TSSOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.04 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
4.5mm
Width
3.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details