N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3

RS Stock No.: 827-4836PBrand: Texas InstrumentsManufacturers Part No.: CSD17308Q3
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Technical documents

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Width

3.4mm

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

P.O.A.

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3
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Production pack (Reel)

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Standard - each

Available in multiples of 10.

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Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Width

3.4mm

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments