P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP Texas Instruments CSD25404Q3T

RS Stock No.: 133-0156Brand: Texas InstrumentsManufacturers Part No.: CSD25404Q3T
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Technical documents

Specifications

Brand

Texas Instruments

Channel Type

P

Maximum Continuous Drain Current

104 A

Maximum Drain Source Voltage

20 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

3.4mm

Number of Elements per Chip

1

Width

3.4mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Height

1.1mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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P.O.A.

P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP Texas Instruments CSD25404Q3T
Select packaging type

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP Texas Instruments CSD25404Q3T
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Technical documents

Specifications

Brand

Texas Instruments

Channel Type

P

Maximum Continuous Drain Current

104 A

Maximum Drain Source Voltage

20 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

3.4mm

Number of Elements per Chip

1

Width

3.4mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Height

1.1mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments