Dual P-Channel MOSFET, 70 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87335Q3DT

RS Stock No.: 133-0158Brand: Texas InstrumentsManufacturers Part No.: CSD87335Q3DT
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Technical documents

Specifications

Brand

Texas Instruments

Channel Type

P

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

30 V

Package Type

LSON-CLIP

Series

NexFET

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

6 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-8 V, +10 V

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

11 nC, 19 nC

Width

3.4mm

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.5mm

Product details

Power MOSFET Modules, Texas Instruments

Half-Bridge NexFET Power Block

MOSFET Transistors, Texas Instruments

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P.O.A.

Dual P-Channel MOSFET, 70 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87335Q3DT
Select packaging type

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

Dual P-Channel MOSFET, 70 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87335Q3DT
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Technical documents

Specifications

Brand

Texas Instruments

Channel Type

P

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

30 V

Package Type

LSON-CLIP

Series

NexFET

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

6 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-8 V, +10 V

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

11 nC, 19 nC

Width

3.4mm

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.5mm

Product details

Power MOSFET Modules, Texas Instruments

Half-Bridge NexFET Power Block

MOSFET Transistors, Texas Instruments