P-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-723 Toshiba SSM3J15FV

RS Stock No.: 171-2395Brand: ToshibaManufacturers Part No.: SSM3J15FV
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Technical documents

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-723

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

32 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.7V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

150 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

0.8mm

Height

0.5mm

Country of Origin

Japan

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P.O.A.

P-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-723 Toshiba SSM3J15FV

8000

Available in multiples of 8000
8000P.O.A.
16000P.O.A.
24000P.O.A.
32000P.O.A.
40000P.O.A.
48000P.O.A.
56000P.O.A.
64000P.O.A.
72000P.O.A.
80000P.O.A.
88000P.O.A.
96000P.O.A.
104000P.O.A.
112000P.O.A.
120000P.O.A.

P.O.A.

P-Channel MOSFET, 100 mA, 30 V, 3-Pin SOT-723 Toshiba SSM3J15FV
Stock information temporarily unavailable.

8000

Available in multiples of 8000
8000P.O.A.
16000P.O.A.
24000P.O.A.
32000P.O.A.
40000P.O.A.
48000P.O.A.
56000P.O.A.
64000P.O.A.
72000P.O.A.
80000P.O.A.
88000P.O.A.
96000P.O.A.
104000P.O.A.
112000P.O.A.
120000P.O.A.

Technical documents

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-723

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

32 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.7V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

150 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

0.8mm

Height

0.5mm

Country of Origin

Japan