Toshiba Silicon P-Channel MOSFET, 6 A, 20 V, 3-Pin SOT-23 SSM3J328R,LF(T

RS Stock No.: 236-3567PBrand: ToshibaManufacturers Part No.: SSM3J328R,LF(T
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Technical documents

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.84e+007 Ω

Maximum Gate Threshold Voltage

1V

Number of Elements per Chip

1

Transistor Material

Silicon

Stock information temporarily unavailable.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Toshiba Silicon P-Channel MOSFET, 6 A, 20 V, 3-Pin SOT-23 SSM3J328R,LF(T
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Production pack (Reel)

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Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Toshiba Silicon P-Channel MOSFET, 6 A, 20 V, 3-Pin SOT-23 SSM3J328R,LF(T
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.84e+007 Ω

Maximum Gate Threshold Voltage

1V

Number of Elements per Chip

1

Transistor Material

Silicon