Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 SSM3J334R,LF(T

Brand

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.8mm

Country of Origin

Japan