Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
100 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Width
0.8mm
Length
1.6mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.7mm
Country of Origin
Japan
Product details
MOSFET N-Channel, SSM3K Series, Toshiba
MOSFET Transistors, Toshiba
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
100 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Width
0.8mm
Length
1.6mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.7mm
Country of Origin
Japan
Product details
