Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.3e+007 Ω
Maximum Gate Threshold Voltage
2.5V
Transistor Material
Silicon
Number of Elements per Chip
1
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P.O.A.
Silicon N-Channel MOSFET, 6 A, 60 V, 3-Pin SOT-23 Toshiba SSM3K341R,LF(T
Select packaging type
Standard
25
P.O.A.
Silicon N-Channel MOSFET, 6 A, 60 V, 3-Pin SOT-23 Toshiba SSM3K341R,LF(T
Stock information temporarily unavailable.
Select packaging type
Standard
25
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.3e+007 Ω
Maximum Gate Threshold Voltage
2.5V
Transistor Material
Silicon
Number of Elements per Chip
1