Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)

Brand

Channel Type

N

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

20 V

Package Type

US6

Series

SSM6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Length

1.25mm

Maximum Operating Temperature

+150 °C

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.9mm

Minimum Operating Temperature

-55 °C

Country of Origin

Japan