Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
1
Transistor Material
Silicon
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P.O.A.
Silicon N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 Toshiba T2N7002AK,LM(T
Select packaging type
Standard
250
P.O.A.
Silicon N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 Toshiba T2N7002AK,LM(T
Stock information temporarily unavailable.
Select packaging type
Standard
250
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
1
Transistor Material
Silicon