Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

RS Stock No.: 206-9723Brand: ToshibaManufacturers Part No.: TK090A65Z,S4X(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

TK090A65Z

Package Type

TO-220SIS

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

P.O.A.

Each (In a Tube of 50) (ex VAT)

Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

Each (In a Tube of 50) (ex VAT)

Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

Stock information temporarily unavailable.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

TK090A65Z

Package Type

TO-220SIS

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon