Toshiba U-MOSVIII-H N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1,S1X(S

Brand

Channel Type

N

Maximum Continuous Drain Current

263 A

Maximum Drain Source Voltage

60 V

Series

U-MOSVIII-H

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

255 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

15.1mm

Country of Origin

Japan