Toshiba DTMOSIV N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK TK11P65W,RQ(S

Brand

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

6.1mm

Length

6.6mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Forward Diode Voltage

1.7V

Height

2.3mm

Country of Origin

Japan