Toshiba U-MOSVIII-H N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TK15S04N1L,LQ(O

Brand

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Series

U-MOSVIII-H

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.5mm

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Country of Origin

Japan