N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS Toshiba TK25A60X,S5X(M

Brand

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Height

15mm

Forward Diode Voltage

1.7V

Country of Origin

Japan