N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1,S1X(S

Brand

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

53 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Height

15.1mm

Series

U-MOSVIII-H

Forward Diode Voltage

1.2V