Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 TK32E12N1,S1X(S

Brand

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

98 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

15.1mm

Country of Origin

China