Toshiba TK N-Channel MOSFET, 50 A, 40 V, 3-Pin DP TK50P04M1(T6RSS-Q)

RS Stock No.: 695-5921Brand: ToshibaManufacturers Part No.: TK50P04M1(T6RSS-Q)
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Series

TK

Package Type

DP

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 5 V, 38 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.3mm

Minimum Operating Temperature

-55 °C

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Stock information temporarily unavailable.

P.O.A.

Toshiba TK N-Channel MOSFET, 50 A, 40 V, 3-Pin DP TK50P04M1(T6RSS-Q)

P.O.A.

Toshiba TK N-Channel MOSFET, 50 A, 40 V, 3-Pin DP TK50P04M1(T6RSS-Q)
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Series

TK

Package Type

DP

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 5 V, 38 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.3mm

Minimum Operating Temperature

-55 °C

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba