N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK Toshiba TK8P60W5,RVQ(S

Brand

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

560 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Width

6.1mm

Number of Elements per Chip

1

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan