Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 SQS944ENW-T1_GE3

RS Stock No.: 178-3726Brand: Vishay SiliconixManufacturers Part No.: SQS944ENW-T1_GE3
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Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

27.8 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

11.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Automotive Standard

AEC-Q101

Country of Origin

China

Stock information temporarily unavailable.

P.O.A.

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 SQS944ENW-T1_GE3

1

Available in multiples of 3000
1P.O.A.
3001P.O.A.
6001P.O.A.
9001P.O.A.
12001P.O.A.
15001P.O.A.
18001P.O.A.
21001P.O.A.
24001P.O.A.
27001P.O.A.
30001P.O.A.
33001P.O.A.
36001P.O.A.
39001P.O.A.
42001P.O.A.

P.O.A.

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 SQS944ENW-T1_GE3
Stock information temporarily unavailable.

1

Available in multiples of 3000
1P.O.A.
3001P.O.A.
6001P.O.A.
9001P.O.A.
12001P.O.A.
15001P.O.A.
18001P.O.A.
21001P.O.A.
24001P.O.A.
27001P.O.A.
30001P.O.A.
33001P.O.A.
36001P.O.A.
39001P.O.A.
42001P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

27.8 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

11.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Automotive Standard

AEC-Q101

Country of Origin

China