Vishay P-Channel MOSFET, 6.1 A, 50 V, 3-Pin TO-220AB IRF9Z20PBF
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.1 A
Maximum Drain Source Voltage
50 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.51mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.65mm
Transistor Material
Si
Height
15.49mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
10
P.O.A.
Each (Supplied in a Tube) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.1 A
Maximum Drain Source Voltage
50 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.51mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.65mm
Transistor Material
Si
Height
15.49mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details