Vishay N-Channel MOSFET, 1.8 A, 800 V, 3-Pin TO-220AB IRFBE20PBF

RS Stock No.: 542-9535Brand: VishayManufacturers Part No.: IRFBE20PBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

6.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

Vishay N-Channel MOSFET, 1.8 A, 800 V, 3-Pin TO-220AB IRFBE20PBF
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1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
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5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
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11P.O.A.
12P.O.A.
13P.O.A.
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P.O.A.

Vishay N-Channel MOSFET, 1.8 A, 800 V, 3-Pin TO-220AB IRFBE20PBF

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

quantityUnit price
1 - 24P.O.A.
25 - 99P.O.A.
100 - 249P.O.A.
250 - 499P.O.A.
500+P.O.A.
You may be interested in

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

6.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

You may be interested in