N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP Vishay IRFD210PBF
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
200 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
3.37mm
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
1
P.O.A.
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 24 | P.O.A. |
| 25 - 99 | P.O.A. |
| 100 - 249 | P.O.A. |
| 250 - 499 | P.O.A. |
| 500+ | P.O.A. |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
200 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
3.37mm
Product details