Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF

RS Stock No.: 541-0733Brand: VishayManufacturers Part No.: IRFD9014PBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Height

3.37mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF
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Available in multiples of 1.

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Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 24P.O.A.
25 - 99P.O.A.
100 - 249P.O.A.
250 - 499P.O.A.
500+P.O.A.
You may be interested in

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Height

3.37mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

You may be interested in