Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9024PBF

RS Stock No.: 541-0547PBrand: VishayManufacturers Part No.: IRFD9024PBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

6.29mm

Height

3.37mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

P.O.A.

Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9024PBF
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Production pack (Tube)

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Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 1
25P.O.A.
26P.O.A.
27P.O.A.
28P.O.A.
29P.O.A.
30P.O.A.
31P.O.A.
32P.O.A.
33P.O.A.
34P.O.A.
35P.O.A.
36P.O.A.
37P.O.A.
38P.O.A.
39P.O.A.

P.O.A.

Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9024PBF

Stock information temporarily unavailable.

Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 1
25P.O.A.
26P.O.A.
27P.O.A.
28P.O.A.
29P.O.A.
30P.O.A.
31P.O.A.
32P.O.A.
33P.O.A.
34P.O.A.
35P.O.A.
36P.O.A.
37P.O.A.
38P.O.A.
39P.O.A.

Stock information temporarily unavailable.

quantityUnit price
25 - 99P.O.A.
100 - 249P.O.A.
250 - 499P.O.A.
500+P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

6.29mm

Height

3.37mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor