Vishay N-Channel MOSFET, 4.6 A, 500 V, 3-Pin TO-220FP IRFI840GPBF

RS Stock No.: 540-8279PBrand: VishayManufacturers Part No.: IRFI840GPBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.6 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

67 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Height

9.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

P.O.A.

Vishay N-Channel MOSFET, 4.6 A, 500 V, 3-Pin TO-220FP IRFI840GPBF
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11P.O.A.
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13P.O.A.
14P.O.A.
15P.O.A.
16P.O.A.
17P.O.A.
18P.O.A.
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20P.O.A.
21P.O.A.
22P.O.A.
23P.O.A.
24P.O.A.

P.O.A.

Vishay N-Channel MOSFET, 4.6 A, 500 V, 3-Pin TO-220FP IRFI840GPBF

Stock information temporarily unavailable.

Select packaging type

Production pack (Tape)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 1
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.
16P.O.A.
17P.O.A.
18P.O.A.
19P.O.A.
20P.O.A.
21P.O.A.
22P.O.A.
23P.O.A.
24P.O.A.

Stock information temporarily unavailable.

quantityUnit price
10 - 49P.O.A.
50 - 99P.O.A.
100+P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.6 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

67 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Height

9.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor