N-Channel MOSFET, 2.7 A, 60 V, 3+Tab-Pin SOT-223 Vishay IRFL014PBF

RS Stock No.: 540-9733PBrand: VishayManufacturers Part No.: IRFL014PBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3+Tab

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.7mm

Width

3.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.45mm

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P.O.A.

N-Channel MOSFET, 2.7 A, 60 V, 3+Tab-Pin SOT-223 Vishay IRFL014PBF
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Available in multiples of 1
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P.O.A.

N-Channel MOSFET, 2.7 A, 60 V, 3+Tab-Pin SOT-223 Vishay IRFL014PBF
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Buy in bulk

quantityUnit price
1 - 24P.O.A.
25 - 99P.O.A.
100 - 249P.O.A.
250+P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3+Tab

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.7mm

Width

3.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.45mm