Vishay N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRLD120PBF

RS Stock No.: 543-0484PBrand: VishayManufacturers Part No.: IRLD120PBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

12 nC @ 5 V

Width

6.29mm

Transistor Material

Si

Length

5mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

3.37mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

P.O.A.

Vishay N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRLD120PBF
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Available in multiples of 1.

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25

Available in multiples of 1
25P.O.A.
26P.O.A.
27P.O.A.
28P.O.A.
29P.O.A.
30P.O.A.
31P.O.A.
32P.O.A.
33P.O.A.
34P.O.A.
35P.O.A.
36P.O.A.
37P.O.A.
38P.O.A.
39P.O.A.

P.O.A.

Vishay N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRLD120PBF

Stock information temporarily unavailable.

Select packaging type

Production pack (Bag)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 1
25P.O.A.
26P.O.A.
27P.O.A.
28P.O.A.
29P.O.A.
30P.O.A.
31P.O.A.
32P.O.A.
33P.O.A.
34P.O.A.
35P.O.A.
36P.O.A.
37P.O.A.
38P.O.A.
39P.O.A.

Stock information temporarily unavailable.

quantityUnit price
25 - 99P.O.A.
100+P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

12 nC @ 5 V

Width

6.29mm

Transistor Material

Si

Length

5mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

3.37mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor