Vishay N-Channel MOSFET, 7.7 A, 60 V, 3-Pin DPAK IRLR014PBF
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
8.4 nC @ 5 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Standard
5
P.O.A.
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 5 - 20 | P.O.A. |
| 25 - 95 | P.O.A. |
| 100 - 245 | P.O.A. |
| 250+ | P.O.A. |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
8.4 nC @ 5 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details