N-Channel MOSFET Transistor, 850 mA, 30 V, 3-Pin SC-70 Vishay SI1304BDL-T1-E3

RS Stock No.: 710-3204Brand: VishayManufacturers Part No.: SI1304BDL-T1-E3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

30 V

Package Type

SC-70

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

340 mW

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

1.8 nC @ 4.5 V

Width

1.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2mm

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

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P.O.A.

N-Channel MOSFET Transistor, 850 mA, 30 V, 3-Pin SC-70 Vishay SI1304BDL-T1-E3

P.O.A.

N-Channel MOSFET Transistor, 850 mA, 30 V, 3-Pin SC-70 Vishay SI1304BDL-T1-E3

Stock information temporarily unavailable.

Stock information temporarily unavailable.

You may be interested in

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

30 V

Package Type

SC-70

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

340 mW

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

1.8 nC @ 4.5 V

Width

1.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2mm

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

You may be interested in