P-Channel MOSFET, 1.1 A, 20 V, 3-Pin SOT-323 Vishay SI1317DL-T1-GE3

RS Stock No.: 812-3066PBrand: VishayManufacturers Part No.: SI1317DL-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

4.3 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-50 °C

Height

1mm

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

P-Channel MOSFET, 1.1 A, 20 V, 3-Pin SOT-323 Vishay SI1317DL-T1-GE3
Select packaging type

P.O.A.

P-Channel MOSFET, 1.1 A, 20 V, 3-Pin SOT-323 Vishay SI1317DL-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

4.3 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-50 °C

Height

1mm

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor