Vishay SI2122DS N-Channel MOSFET, 2.17 A, 100 V, 3-Pin PowerPAK SI2122DS-T1-GE3

RS Stock No.: 653-087Brand: VishayManufacturers Part No.: SI2122DS-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.17 A

Maximum Drain Source Voltage

100 V

Series

SI2122DS

Package Type

PowerPAK

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

Si

Number of Elements per Chip

1

Country of Origin

China

P.O.A.

Vishay SI2122DS N-Channel MOSFET, 2.17 A, 100 V, 3-Pin PowerPAK SI2122DS-T1-GE3

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Vishay SI2122DS N-Channel MOSFET, 2.17 A, 100 V, 3-Pin PowerPAK SI2122DS-T1-GE3

Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.17 A

Maximum Drain Source Voltage

100 V

Series

SI2122DS

Package Type

PowerPAK

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

Si

Number of Elements per Chip

1

Country of Origin

China