Vishay P-Channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23 SI2333CDS-T1-GE3

RS Stock No.: 710-3260Brand: VishayManufacturers Part No.: SI2333CDS-T1-GE3
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.25 W

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

15 nC @ 4.5 V, 9 nC @ 2.5 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

You may be interested in

P.O.A.

Vishay P-Channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23 SI2333CDS-T1-GE3

P.O.A.

Vishay P-Channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23 SI2333CDS-T1-GE3

Stock information temporarily unavailable.

Stock information temporarily unavailable.

You may be interested in

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.25 W

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

15 nC @ 4.5 V, 9 nC @ 2.5 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

You may be interested in